NDS7002A mosfet equivalent, n-channel mosfet.
Y Y Y Y Y
Efficient high density cell design approaching (3 million in2) Voltage controlled small signal switch Rugged High saturation current Low RDS (ON)
TL G 11378 <.
requiring up to 400 mA DC and can deliver pulsed currents up to 2A This product is particularly suited to low voltage lo.
These n-channel enhancement mode field effect transistors are produced using National’s very high cell density third generation DMOS technology These products have been designed to minimize on-state resistance provide rugged and reliable performance .
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